Please use this identifier to cite or link to this item: http://repositorio.unitau.br/jspui/handle/20.500.11874/2379
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dc.contributor.authorRichetto K.C.S.pt_BR
dc.contributor.authorSilva C.R.M.pt_BR
dc.date.accessioned2019-09-12T16:37:10Z-
dc.date.available2019-09-12T16:37:10Z-
dc.date.issued2008-
dc.citation.volume591-593pt_BR
dc.citation.spage760-
dc.citation.epage765-
dc.identifier.isbn9770255547605-
dc.identifier.issn2555476-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-58149120742&partnerID=40&md5=e3f2f04b5594ded0bea39e55f3f66a17-
dc.identifier.urihttp://repositorio.unitau.br/jspui/handle/20.500.11874/2379-
dc.description.abstractSilicon Nitride is considered as an important material for use in structural applications. Its performance is severely influenced by modern synthesis processes. In the present work, silicon nitride powder synthesis was performed using liquid silicon tetrachloride and gaseous ammonia, at low temperature and inert atmosphere. Diimide pyrolisis was made on temperature between 1300 and 1500 °C. A Taguchi design of experiments methodology was applied, aiming to obtain powders with appropriated characteristics for structural applications. On pyrolisis, the use of alumina based substrates resulted on SIALON phase formation, probably originated from oxygen reaction, provided from alumina. Silicon carbide substrates and alumina recovered with silicon nitride enhance synthesis of pure silicon nitride powder.en
dc.description.provenanceMade available in DSpace on 2019-09-12T16:37:10Z (GMT). No. of bitstreams: 0 Previous issue date: 2008en
dc.languageInglêspt_BR
dc.publisherTrans Tech Publications Ltd-
dc.publisher.countryBrasilpt_BR
dc.relation.ispartofMaterials Science Forum-
dc.relation.haspart6th International Latin American Conference on Powder Technology, PTECH 2007-
dc.rightsAcesso Restritopt_BR
dc.sourceScopuspt_BR
dc.subject.otherSilicon nitrideen
dc.subject.otherTaguchi planning methodologyen
dc.subject.otherDesign of experimentsen
dc.subject.otherNitridesen
dc.subject.otherOxygenen
dc.subject.otherPowdersen
dc.subject.otherSilicon carbideen
dc.subject.otherSilicon nitrideen
dc.subject.otherGaseous ammoniasen
dc.subject.otherInert atmospheresen
dc.subject.otherLiquid siliconsen
dc.subject.otherLow temperaturesen
dc.subject.otherOxygen reactionsen
dc.subject.otherPhase formationsen
dc.subject.otherPure siliconsen
dc.subject.otherSilicon carbide substratesen
dc.subject.otherSilicon nitride powdersen
dc.subject.otherStructural applicationsen
dc.subject.otherSynthesis ofen
dc.subject.otherSynthesis processesen
dc.subject.otherTaguchi design of experimentsen
dc.subject.otherTaguchi planning methodologyen
dc.subject.otherNonmetalsen
dc.titleSynthesis of silicon nitride using taguchi planning methodologyen
dc.typeTrabalho apresentado em eventopt_BR
dc.description.affiliationRichetto, K.C.S., Universidade de Taubaté UNITAU, Departamento de Matemática e Física, Taubaté - SP, Brazil-
dc.description.affiliationSilva, C.R.M., Universidade de Brasília UNB, Departamento de Engenharia Mecânica, Brasília - DF, Brazil-
dc.identifier.scopus2-s2.0-58149120742-
dc.contributor.scopus7801505879pt_BR
dc.contributor.scopus25931164300pt_BR
Appears in Collections:Trabalhos Apresentados em Eventos
Artigos de Periódicos

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